Effective Electron Mass in Low-Dimensional Semiconductors
Bhattacharya, Sitangshu.
Effective Electron Mass in Low-Dimensional Semiconductors [electronic resource] / by Sitangshu Bhattacharya, Kamakhya Prasad Ghatak. - XXIV, 536 p. online resource. - Springer Series in Materials Science, 167 0933-033X ; . - Springer Series in Materials Science, 167 .
Part I: Influence of Light Waves on the Effective Electron Mass (EEM) in Optoelectronic Semiconductors -- Part II: Influence of Quantum Confinement on the EEM in Non-Parabolic Semiconductors -- Part III: The EEM in Quantum Confined Superlattices of Non- Parabolic Semiconductors -- Part IV: Influence of Intense Electric Field on the EEM in Optoelectronic Semiconductors.
This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped semiconductors and their nanostructures is discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph. D aspirants and researchers in the fields of solid-state sciences, materials science, nanoscience and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures. The book is written for post graduate students, researchers and engineers, professionals in the fields of solid state sciences, materials science, nanoscience and technology, nanostructured materials and condensed matter physics.
9783642312489
10.1007/978-3-642-31248-9 doi
Physics.
Quantum optics.
Solid state physics.
Nanoscale science.
Nanoscience.
Nanostructures.
Microwaves.
Optical engineering.
Structural materials.
Optical materials.
Electronic materials.
Physics.
Solid State Physics.
Optical and Electronic Materials.
Nanoscale Science and Technology.
Structural Materials.
Microwaves, RF and Optical Engineering.
Quantum Optics.
QC176-176.9
530.41
Effective Electron Mass in Low-Dimensional Semiconductors [electronic resource] / by Sitangshu Bhattacharya, Kamakhya Prasad Ghatak. - XXIV, 536 p. online resource. - Springer Series in Materials Science, 167 0933-033X ; . - Springer Series in Materials Science, 167 .
Part I: Influence of Light Waves on the Effective Electron Mass (EEM) in Optoelectronic Semiconductors -- Part II: Influence of Quantum Confinement on the EEM in Non-Parabolic Semiconductors -- Part III: The EEM in Quantum Confined Superlattices of Non- Parabolic Semiconductors -- Part IV: Influence of Intense Electric Field on the EEM in Optoelectronic Semiconductors.
This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped semiconductors and their nanostructures is discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph. D aspirants and researchers in the fields of solid-state sciences, materials science, nanoscience and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures. The book is written for post graduate students, researchers and engineers, professionals in the fields of solid state sciences, materials science, nanoscience and technology, nanostructured materials and condensed matter physics.
9783642312489
10.1007/978-3-642-31248-9 doi
Physics.
Quantum optics.
Solid state physics.
Nanoscale science.
Nanoscience.
Nanostructures.
Microwaves.
Optical engineering.
Structural materials.
Optical materials.
Electronic materials.
Physics.
Solid State Physics.
Optical and Electronic Materials.
Nanoscale Science and Technology.
Structural Materials.
Microwaves, RF and Optical Engineering.
Quantum Optics.
QC176-176.9
530.41