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GaP Heteroepitaxy on Si(100) (Record no. 45554)

MARC details
000 -LEADER
fixed length control field 03096nam a22005297a 4500
001 - CONTROL NUMBER
control field sulb-eb0023462
003 - CONTROL NUMBER IDENTIFIER
control field BD-SySUS
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20160413122352.0
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr nn 008mamaa
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 131128s2013 gw | s |||| 0|eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783319028804
-- 978-3-319-02880-4
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.1007/978-3-319-02880-4
Source of number or code doi
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number QC610.9-611.8
072 #7 - SUBJECT CATEGORY CODE
Subject category code TJFD5
Source bicssc
Subject category code TEC008090
Source bisacsh
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 537.622
Edition number 23
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Döscher, Henning.
Relator term author.
245 10 - TITLE STATEMENT
Title GaP Heteroepitaxy on Si(100)
Medium [electronic resource] :
Remainder of title Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients /
Statement of responsibility, etc. by Henning Döscher.
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture Cham :
Name of producer, publisher, distributor, manufacturer Springer International Publishing :
-- Imprint: Springer,
Date of production, publication, distribution, manufacture, or copyright notice 2013.
300 ## - PHYSICAL DESCRIPTION
Extent XIV, 143 p. 80 illus., 33 illus. in color.
Other physical details online resource.
336 ## - CONTENT TYPE
Content type term text
Content type code txt
Source rdacontent
337 ## - MEDIA TYPE
Media type term computer
Media type code c
Source rdamedia
338 ## - CARRIER TYPE
Carrier type term online resource
Carrier type code cr
Source rdacarrier
347 ## - DIGITAL FILE CHARACTERISTICS
File type text file
Encoding format PDF
Source rda
490 1# - SERIES STATEMENT
Series statement Springer Theses, Recognizing Outstanding Ph.D. Research,
International Standard Serial Number 2190-5053
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note Introduction -- Experimental -- Si(100) surfaces in chemical vapor environments -- GaP(100) and InP(100) surfaces -- GaP growth on Si(100) and anti-phase disorder -- Conclusion.
520 ## - SUMMARY, ETC.
Summary, etc. Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure of the Si(100) substrates prior to III-V nucleation prevents the formation of antiphase domains. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Physics.
Topical term or geographic name as entry element Semiconductors.
Topical term or geographic name as entry element Optics.
Topical term or geographic name as entry element Optoelectronics.
Topical term or geographic name as entry element Plasmons (Physics).
Topical term or geographic name as entry element Optical materials.
Topical term or geographic name as entry element Electronic materials.
Topical term or geographic name as entry element Physics.
Topical term or geographic name as entry element Semiconductors.
Topical term or geographic name as entry element Optics, Optoelectronics, Plasmonics and Optical Devices.
Topical term or geographic name as entry element Optical and Electronic Materials.
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element SpringerLink (Online service)
773 0# - HOST ITEM ENTRY
Title Springer eBooks
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Relationship information Printed edition:
International Standard Book Number 9783319028798
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE
Uniform title Springer Theses, Recognizing Outstanding Ph.D. Research,
International Standard Serial Number 2190-5053
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier <a href="http://dx.doi.org/10.1007/978-3-319-02880-4">http://dx.doi.org/10.1007/978-3-319-02880-4</a>
912 ## -
-- ZDB-2-PHA
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Source of classification or shelving scheme
Koha item type

No items available.