GaP Heteroepitaxy on Si(100) (Record no. 45554)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 03096nam a22005297a 4500 |
| 001 - CONTROL NUMBER | |
| control field | sulb-eb0023462 |
| 003 - CONTROL NUMBER IDENTIFIER | |
| control field | BD-SySUS |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20160413122352.0 |
| 007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION | |
| fixed length control field | cr nn 008mamaa |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 131128s2013 gw | s |||| 0|eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| International Standard Book Number | 9783319028804 |
| -- | 978-3-319-02880-4 |
| 024 7# - OTHER STANDARD IDENTIFIER | |
| Standard number or code | 10.1007/978-3-319-02880-4 |
| Source of number or code | doi |
| 050 #4 - LIBRARY OF CONGRESS CALL NUMBER | |
| Classification number | QC610.9-611.8 |
| 072 #7 - SUBJECT CATEGORY CODE | |
| Subject category code | TJFD5 |
| Source | bicssc |
| Subject category code | TEC008090 |
| Source | bisacsh |
| 082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER | |
| Classification number | 537.622 |
| Edition number | 23 |
| 100 1# - MAIN ENTRY--PERSONAL NAME | |
| Personal name | Döscher, Henning. |
| Relator term | author. |
| 245 10 - TITLE STATEMENT | |
| Title | GaP Heteroepitaxy on Si(100) |
| Medium | [electronic resource] : |
| Remainder of title | Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients / |
| Statement of responsibility, etc. | by Henning Döscher. |
| 264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE | |
| Place of production, publication, distribution, manufacture | Cham : |
| Name of producer, publisher, distributor, manufacturer | Springer International Publishing : |
| -- | Imprint: Springer, |
| Date of production, publication, distribution, manufacture, or copyright notice | 2013. |
| 300 ## - PHYSICAL DESCRIPTION | |
| Extent | XIV, 143 p. 80 illus., 33 illus. in color. |
| Other physical details | online resource. |
| 336 ## - CONTENT TYPE | |
| Content type term | text |
| Content type code | txt |
| Source | rdacontent |
| 337 ## - MEDIA TYPE | |
| Media type term | computer |
| Media type code | c |
| Source | rdamedia |
| 338 ## - CARRIER TYPE | |
| Carrier type term | online resource |
| Carrier type code | cr |
| Source | rdacarrier |
| 347 ## - DIGITAL FILE CHARACTERISTICS | |
| File type | text file |
| Encoding format | |
| Source | rda |
| 490 1# - SERIES STATEMENT | |
| Series statement | Springer Theses, Recognizing Outstanding Ph.D. Research, |
| International Standard Serial Number | 2190-5053 |
| 505 0# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | Introduction -- Experimental -- Si(100) surfaces in chemical vapor environments -- GaP(100) and InP(100) surfaces -- GaP growth on Si(100) and anti-phase disorder -- Conclusion. |
| 520 ## - SUMMARY, ETC. | |
| Summary, etc. | Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure of the Si(100) substrates prior to III-V nucleation prevents the formation of antiphase domains. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name as entry element | Physics. |
| Topical term or geographic name as entry element | Semiconductors. |
| Topical term or geographic name as entry element | Optics. |
| Topical term or geographic name as entry element | Optoelectronics. |
| Topical term or geographic name as entry element | Plasmons (Physics). |
| Topical term or geographic name as entry element | Optical materials. |
| Topical term or geographic name as entry element | Electronic materials. |
| Topical term or geographic name as entry element | Physics. |
| Topical term or geographic name as entry element | Semiconductors. |
| Topical term or geographic name as entry element | Optics, Optoelectronics, Plasmonics and Optical Devices. |
| Topical term or geographic name as entry element | Optical and Electronic Materials. |
| 710 2# - ADDED ENTRY--CORPORATE NAME | |
| Corporate name or jurisdiction name as entry element | SpringerLink (Online service) |
| 773 0# - HOST ITEM ENTRY | |
| Title | Springer eBooks |
| 776 08 - ADDITIONAL PHYSICAL FORM ENTRY | |
| Relationship information | Printed edition: |
| International Standard Book Number | 9783319028798 |
| 830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE | |
| Uniform title | Springer Theses, Recognizing Outstanding Ph.D. Research, |
| International Standard Serial Number | 2190-5053 |
| 856 40 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | <a href="http://dx.doi.org/10.1007/978-3-319-02880-4">http://dx.doi.org/10.1007/978-3-319-02880-4</a> |
| 912 ## - | |
| -- | ZDB-2-PHA |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Source of classification or shelving scheme | |
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No items available.