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In-vitro materials design : (Record no. 65529)

MARC details
000 -LEADER
fixed length control field 06525cam a2200637Ii 4500
001 - CONTROL NUMBER
control field sulb-eb0033877
003 - CONTROL NUMBER IDENTIFIER
control field BD-SySUS
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20170713221421.0
006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS
fixed length control field m o d
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr cnu|||unuuu
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 150511s2015 gw ob 001 0 eng d
040 ## - CATALOGING SOURCE
Original cataloging agency N$T
Language of cataloging eng
Description conventions rda
-- pn
Transcribing agency N$T
Modifying agency N$T
-- IDEBK
-- DG1
-- RECBK
-- CDX
-- COO
-- VRC
-- UPM
-- DEBSZ
-- DEBBG
-- BD-SySUS
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783527667352
Qualifying information electronic bk.
International Standard Book Number 3527667350
Qualifying information electronic bk.
International Standard Book Number 9783527667383
Qualifying information electronic bk.
International Standard Book Number 3527667385
Qualifying information electronic bk.
Canceled/invalid ISBN 9783527334230
International Standard Book Number 3527334238
International Standard Book Number 9783527334230
029 1# - OTHER SYSTEM CONTROL NUMBER (OCLC)
OCLC library identifier AU@
System control number 000055511298
OCLC library identifier DEBSZ
System control number 453343805
OCLC library identifier DEBBG
System control number BV042991527
OCLC library identifier DEBBG
System control number BV043397778
035 ## - SYSTEM CONTROL NUMBER
System control number (OCoLC)908685727
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number TA403
072 #7 - SUBJECT CATEGORY CODE
Subject category code TEC
Subject category code subdivision 009000
Source bisacsh
Subject category code TEC
Subject category code subdivision 035000
Source bisacsh
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 620.1/1
Edition number 23
049 ## - LOCAL HOLDINGS (OCLC)
Holding library MAIN
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Leitsmann, Roman,
Relator term author.
245 10 - TITLE STATEMENT
Title In-vitro materials design :
Remainder of title modern atomistic simulation methods for engineers /
Statement of responsibility, etc. Roman Leitsmann, Philipp Plänitz, and Michael Schreiber.
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture Weinheim, Germany :
Name of producer, publisher, distributor, manufacturer Wiley-VCH,
Date of production, publication, distribution, manufacture, or copyright notice [2015]
300 ## - PHYSICAL DESCRIPTION
Extent 1 online resource.
336 ## - CONTENT TYPE
Content type term text
Content type code txt
Source rdacontent
337 ## - MEDIA TYPE
Media type term computer
Media type code c
Source rdamedia
338 ## - CARRIER TYPE
Carrier type term online resource
Carrier type code cr
Source rdacarrier
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc Includes bibliographical references and index.
588 0# - SOURCE OF DESCRIPTION NOTE
Source of description note Vendor-supplied metadata.
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note Machine generated contents note: pt. I Basic Physical and Mathematical Principles -- 1.Introduction -- 2.Newtonian Mechanics and Thermodynamics -- 2.1.Equation of Motion -- 2.2.Energy Conservation -- 2.3.Many Body Systems -- 2.4.Thermodynamics -- 3.Operators and Fourier Transformations -- 3.1.Complex Numbers -- 3.2.Operators -- 3.3.Fourier Transformation -- 4.Quantum Mechanical Concepts -- 4.1.Heuristic Derivation -- 4.2.Stationary Schrodinger Equation -- 4.3.Expectation Value and Uncertainty Principle -- 5.Chemical Properties and Quantum Theory -- 5.1.Atomic Model -- 5.2.Molecular Orbital Theory -- 6.Crystal Symmetry and Bravais Lattice -- 6.1.Symmetry in Nature -- 6.2.Symmetry in Molecules -- 6.3.Symmetry in Crystals -- 6.4.Bloch Theorem and Band Structure -- pt. II Computational Methods -- 7.Introduction -- 8.Classical Simulation Methods -- 8.1.Molecular Mechanics -- 8.2.Simple Force-Field Approach -- 8.3.Reactive Force-Field Approach -- 9.Quantum Mechanical Simulation Methods -- 9.1.Born -- Oppenheimer Approximation and Pseudopotentials -- 9.2.Hartree -- Fock Method -- 9.3.Density Functional Theory -- 9.4.Meaning of the Single-Electron Energies within DFT and HF -- 9.5.Approximations for the Exchange -- Correlation Functional Exc -- 9.5.1.Local Density Approximation -- 9.5.2.Generalized Gradient Approximation -- 9.5.3.Hybrid Functionals -- 9.6.Wave Function Representations -- 9.6.1.Real-Space Representation -- 9.6.2.Plane Wave Representation -- 9.6.3.Local Basis Sets -- 9.6.4.Combined Basis Sets -- 9.7.Concepts Beyond HF and DFT -- 9.7.1.Quasiparticle Shift and the GW Approximation -- 9.7.2.Scissors Shift -- 9.7.3.Excitonic Effects -- 9.7.4.TDDFT -- 9.7.5.Post-Hartree -- Fock Methods -- 9.7.5.1.Configuration Interaction (CI) -- 9.7.5.2.Coupled Cluster (CC) -- 9.7.5.3.Møller -- Plesset Perturbation Theory (MPn) -- 10.Multiscale Approaches -- 10.1.Coarse-Grained Approaches -- 10.2.QM/MM Approaches -- 11.Chemical Reactions -- 11.1.Transition State Theory -- 11.2.Nudged Elastic Band Method -- pt. III Industrial Applications -- 12.Introduction -- 13.Microelectronic CMOS Technology -- 13.1.Introduction -- 13.2.Work Function Tunability in High-K Gate Stacks -- 13.2.1.Concrete Problem and Goal -- 13.2.2.Simulation Approach -- 13.2.3.Modeling of the Bulk Materials -- 13.2.4.Construction of the HKMG Stack Model -- 13.2.5.Calculation of the Band Alignment -- 13.2.6.Simulation Results and Practical Impact -- 13.3.Influence of Defect States in High-K Gate Stacks -- 13.3.1.Concrete Problem and Goal -- 13.3.2.Simulation Approach and Model System -- 13.3.3.Calculation of the Charge Transition Level -- 13.3.4.Simulation Results and Practical Impact -- 13.4.Ultra-Low-K Materials in the Back-End-of-Line -- 13.4.1.Concrete Problem and Goal -- 13.4.2.Simulation Approach -- 13.4.3.The Silylation Process: Preliminary Considerations -- 13.4.4.Simulation Results and Practical Impact -- 14.Modeling of Chemical Processes -- 14.1.Introduction -- 14.2.GaN Crystal Growth -- 14.2.1.Concrete Problem and Goal -- 14.2.2.Simulation Approach -- 14.2.3.ReaxFF Parameter Training Scheme -- 14.2.4.Set of Training Structures: ab initio Modeling -- 14.2.5.Model System for the Growth Simulations -- 14.2.6.Results and Practical Impact -- 14.3.Intercalation of Ions into Cathode Materials -- 14.3.1.Concrete Problem and Goal -- 14.3.2.Simulation Approach -- 14.3.3.Calculation of the Cell Voltage -- 14.3.4.Obtained Structural Properties of Lix V2 O5 -- 14.3.5.Results for the Cell Voltage -- 15.Properties of Nanostructured Materials -- 15.1.Introduction -- 15.2.Embedded PbTe Quantum Dots -- 15.2.1.Concrete Problem and Goal -- 15.2.2.Simulation Approach -- 15.2.3.Equilibrium Crystal Shape and Wulff Construction -- 15.2.4.Modeling of the Embedded PbTe Quantum Dots -- 15.2.5.Obtained Structural Properties -- 15.2.6.Internal Electric Fields and the Quantum Confined Stark Effect -- 15.3.Nanomagnetism -- 15.3.1.Concrete Problem and Goal -- 15.3.2.Construction of the Silicon Quantum Dots -- 15.3.3.Ab initio Simulation Approach -- 15.3.4.Calculation of the Formation Energy -- 15.3.5.Resulting Stability Properties -- 15.3.6.Obtained Magnetic Properties.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Materials science.
Topical term or geographic name as entry element Materials
General subdivision Design.
Topical term or geographic name as entry element Materials
General subdivision Simulation methods.
Topical term or geographic name as entry element Materials
General subdivision Models.
Topical term or geographic name as entry element TECHNOLOGY & ENGINEERING / Engineering (General)
Source of heading or term bisacsh
Topical term or geographic name as entry element TECHNOLOGY & ENGINEERING / Reference
Source of heading or term bisacsh
655 #4 - INDEX TERM--GENRE/FORM
Genre/form data or focus term Electronic books.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Planitz, Philipp,
Relator term author.
Personal name Schreiber, Michael,
Dates associated with a name 1954-
Relator term author.
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Relationship information Erscheint auch als:
Main entry heading Leitsmann, Roman, 1979
Title In-vitro materials design
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier <a href="http://onlinelibrary.wiley.com/book/10.1002/9783527667352">http://onlinelibrary.wiley.com/book/10.1002/9783527667352</a>
Public note Wiley Online Library [Free Download only for SUST IP]
938 ## -
-- EBSCOhost
-- EBSC
-- 989633
-- Ingram Digital eBook Collection
-- IDEB
-- cis31556513
-- Recorded Books, LLC
-- RECE
-- rbeEB00612344
-- Coutts Information Services
-- COUT
-- 31556513
994 ## -
-- 92
-- DG1

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