TY  - BOOK
AU  - Chaudhry,Amit
ED  - SpringerLink (Online service)
TI  - Fundamentals of Nanoscaled Field Effect Transistors
SN  - 9781461468226
AV  - TK7800-8360 
U1  - 621.381 23
PY  - 2013///
CY  - New York, NY
PB  - Springer New York, Imprint: Springer
KW  - Engineering
KW  - Nanoscale science
KW  - Nanoscience
KW  - Nanostructures
KW  - Electronic circuits
KW  - Electronics
KW  - Microelectronics
KW  - Optical materials
KW  - Electronic materials
KW  - Electronics and Microelectronics, Instrumentation
KW  - Electronic Circuits and Devices
KW  - Circuits and Systems
KW  - Nanoscale Science and Technology
KW  - Optical and Electronic Materials
N1  - Scaling of a MOS Transistor -- Nanoscale Effects- Gate Oxide Leakage Currents -- Nanoscale Effects- Inversion Layer Quantization -- Dielectrics for Nanoelectronics -- Germanium Technology -- Biaxial s-Si Technology -- Uniaxial s-Si Technology -- Alternate MOS Structures -- Graphene Technology
N2  - Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book. In summary, this book: Covers the fundamental principles behind nanoelectronics/microelectronics Includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale Provides some case studies to understand the issue mathematically Fundamentals of Nanoscaled Field Effect Transistors is an ideal book for researchers and undergraduate and graduate students in the field of microelectronics, nanoelectronics, and electronics
UR  - http://dx.doi.org/10.1007/978-1-4614-6822-6
ER  -