TY  - BOOK
AU  - Tan,Cher Ming
AU  - He,Feifei
ED  - SpringerLink (Online service)
TI  - Electromigration Modeling at Circuit Layout Level
T2  - SpringerBriefs in Applied Sciences and Technology,
SN  - 9789814451215
AV  - TA169.7 
U1  - 658.56 23
PY  - 2013///
CY  - Singapore
PB  - Springer Singapore, Imprint: Springer
KW  - Engineering
KW  - Atoms
KW  - Physics
KW  - Electronic circuits
KW  - Quality control
KW  - Reliability
KW  - Industrial safety
KW  - Quality Control, Reliability, Safety and Risk
KW  - Electronic Circuits and Devices
KW  - Atomic, Molecular, Optical and Plasma Physics
N1  - Introduction -- 3D Circuit Model Construction and Simulation -- Comparison of EM Performance in Circuit Structure and Test Structure -- Interconnect EM Reliability Modeling at Circuit Layout Level -- Conclusion
N2  - Integrated circuit (IC) reliability is of increasing concern in present-day IC technology where the interconnect failures significantly increases the failure rate for ICs with decreasing interconnect dimension and increasing number of interconnect levels.  Electromigration (EM) of interconnects has now become the dominant failure mechanism that determines the circuit reliability. This brief addresses the readers to the necessity of 3D real circuit modelling in order to evaluate the EM of interconnect system in ICs, and how they can create such models for their own applications. A 3-dimensional (3D) electro-thermo-structural model as opposed to the conventional current density based 2-dimensional (2D) models is presented at circuit-layout level. 
UR  - http://dx.doi.org/10.1007/978-981-4451-21-5
ER  -