000			03096nam a22005297a 4500
001			sulb-eb0023462
003			BD-SySUS
005			20160413122352.0
007			cr nn 008mamaa
008			131128s2013 gw | s |||| 0|eng d
020			_a9783319028804 _9978-3-319-02880-4
024	7		_a10.1007/978-3-319-02880-4 _2doi
050		4	_aQC610.9-611.8
072		7	_aTJFD5 _2bicssc
072		7	_aTEC008090 _2bisacsh
082	0	4	_a537.622 _223
100	1		_aDöscher, Henning. _eauthor.
245	1	0	_aGaP Heteroepitaxy on Si(100) _h[electronic resource] : _bBenchmarking Surface Signals when Growing GaP on Si in CVD Ambients / _cby Henning Döscher.
264		1	_aCham : _bSpringer International Publishing : _bImprint: Springer, _c2013.
300			_aXIV, 143 p. 80 illus., 33 illus. in color. _bonline resource.
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
347			_atext file _bPDF _2rda
490	1		_aSpringer Theses, Recognizing Outstanding Ph.D. Research, _x2190-5053
505	0		_aIntroduction -- Experimental -- Si(100) surfaces in chemical vapor environments -- GaP(100) and InP(100) surfaces -- GaP growth on Si(100) and anti-phase disorder -- Conclusion.
520			_aEpitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure of the Si(100) substrates prior to III-V nucleation prevents the formation of antiphase domains. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.
650		0	_aPhysics.
650		0	_aSemiconductors.
650		0	_aOptics.
650		0	_aOptoelectronics.
650		0	_aPlasmons (Physics).
650		0	_aOptical materials.
650		0	_aElectronic materials.
650	1	4	_aPhysics.
650	2	4	_aSemiconductors.
650	2	4	_aOptics, Optoelectronics, Plasmonics and Optical Devices.
650	2	4	_aOptical and Electronic Materials.
710	2		_aSpringerLink (Online service)
773	0		_tSpringer eBooks
776	0	8	_iPrinted edition: _z9783319028798
830		0	_aSpringer Theses, Recognizing Outstanding Ph.D. Research, _x2190-5053
856	4	0	_uhttp://dx.doi.org/10.1007/978-3-319-02880-4
912			_aZDB-2-PHA
942			_2Dewey Decimal Classification _ceBooks
999			_c45554 _d45554