000 | 03159nam a22005417a 4500 | ||
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001 | sulb-eb0024154 | ||
003 | BD-SySUS | ||
005 | 20160413122427.0 | ||
007 | cr nn 008mamaa | ||
008 | 130109s2013 gw | s |||| 0|eng d | ||
020 |
_a9783642329708 _9978-3-642-32970-8 |
||
024 | 7 |
_a10.1007/978-3-642-32970-8 _2doi |
|
050 | 4 | _aQC610.9-611.8 | |
072 | 7 |
_aTJFD5 _2bicssc |
|
072 | 7 |
_aTEC008090 _2bisacsh |
|
082 | 0 | 4 |
_a537.622 _223 |
100 | 1 |
_aPohl, Udo W. _eauthor. |
|
245 | 1 | 0 |
_aEpitaxy of Semiconductors _h[electronic resource] : _bIntroduction to Physical Principles / _cby Udo W. Pohl. |
264 | 1 |
_aBerlin, Heidelberg : _bSpringer Berlin Heidelberg : _bImprint: Springer, _c2013. |
|
300 |
_aXIV, 325 p. _bonline resource. |
||
336 |
_atext _btxt _2rdacontent |
||
337 |
_acomputer _bc _2rdamedia |
||
338 |
_aonline resource _bcr _2rdacarrier |
||
347 |
_atext file _bPDF _2rda |
||
490 | 1 |
_aGraduate Texts in Physics, _x1868-4513 |
|
505 | 0 | _aEpitaxy -- Structural Properties of Heterostructures -- Electronic Properties of Heterostructures -- Thermodynamics of Epitaxial Layer-Growth -- Atomistic Aspects of Epitaxial Layer Growth -- Doping, Diffusion, and Contacts -- Methods of Epitaxy. | |
520 | _aIntroduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures and processes during nucleation and growth are treated in detail. The Introduction to Epitaxy requires only little knowledge on solid-state physics. Students of natural sciences, materials science and electrical engineering as well as their lecturers benefit from elementary introductions to theory and practice of epitaxial growth, supported by pertinent references and over 200 detailed illustrations. | ||
650 | 0 | _aPhysics. | |
650 | 0 | _aPhysical chemistry. | |
650 | 0 | _aCrystallography. | |
650 | 0 | _aSemiconductors. | |
650 | 0 | _aOptical materials. | |
650 | 0 | _aElectronic materials. | |
650 | 1 | 4 | _aPhysics. |
650 | 2 | 4 | _aSemiconductors. |
650 | 2 | 4 | _aOptical and Electronic Materials. |
650 | 2 | 4 | _aPhysical Chemistry. |
650 | 2 | 4 | _aApplied and Technical Physics. |
650 | 2 | 4 | _aCrystallography. |
710 | 2 | _aSpringerLink (Online service) | |
773 | 0 | _tSpringer eBooks | |
776 | 0 | 8 |
_iPrinted edition: _z9783642329692 |
830 | 0 |
_aGraduate Texts in Physics, _x1868-4513 |
|
856 | 4 | 0 | _uhttp://dx.doi.org/10.1007/978-3-642-32970-8 |
912 | _aZDB-2-PHA | ||
942 |
_2Dewey Decimal Classification _ceBooks |
||
999 |
_c46246 _d46246 |